マグネトロンスパッタリング法によるホウ素含有薄膜の創成とその機械的特性の評価 : 反応ガス添加の影響

概要

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Thin films containing boron have been prepared on silicon substrates by DC magnetron sputtering using a sintered boron carbide (B_4C) target. The influences of N_2 or H_2 addition as a reactive gas on chemical bonding states, nano-indentation hardness, adhesive strength to the substrate and the friction coefficient of the films are investigated. Nano-indentation studies show that N_2 addition in the film formation process leads to a lower hardness of the film. Absorption spectra in Fourier-transform infrared spectroscopy exhibit peaks corresponding to hexagonal boron nitride, and C ls peaks and N ls peak in X-ray photoelectron spectroscopy spectra indicate that nitrogen dose not bond to carbon. The lack of a three-dimensional boron-carbon-nitrogen network in the films is thought to be a reason for the deterioration in the nano-indentation hardness of the films. On the other hand, the adhesive strength is increased significantly by N_2 or H_2 addition in the film formation process, although the frictional properties of the film against a steel ball in an ambient atmosphere are not improved in this study.
公益社団法人精密工学会の論文
2006-06-05