Characteristics of Dual Polymetal(W/WNx/Poly-Si)Gate Complementary Metal Oxide Semiconductor for 0.1 μm Dynamic Random Access Memory Technology

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Characteristics of Dual Polymetal(W/WNx/Poly-Si)Gate Complementary Metal Oxide Semiconductor for 0.1 μm Dynamic Random Access Memory Technology
Characteristics of Dual Polymetal (W/WNx/Poly-Si) Gate CMOS for 0.1μm DRAM Technology
A 0.1μm CMOS Technology using W/WN_x/Polysilicon Dual Gate Electrode for 4G DRAM and Beyond
A 0.1μm CMOS Technology using W/WN_x/Polysilicon Dual Gate Electrode for 4G DRAM and Beyond
A 0.1μm CMOS Technology using W/WN_x/Polysilicon Dual Gate Electrode for 4G DRAM and Beyond
Simple Formulas for Interconnect Delay and Crosstalk Considering the Transition Time of Ramp Signals
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Moisture Induced Hump Characteristics of Shallow Trench-Isolated Sub-1/4μm nMOSFET
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Moisture Induced Hump Characteristics of Shallow Trench-Isolated Sub-1/4 μm nMOSFET

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