CO_2 Laser CVD of Disilane
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概要
- 論文の詳細を見る
Amorphous silicon films were deposited by a CO_2 laser CVD (chemical vapor deposition) method using disilane gas. With this gas, the films were deposited reasonably fast at relatively low substrate temperatures of 350℃ or above. Unlike monosilane, photo-induced effects in the gas phase following light absorption were negligible in deposition processes, and only the pyrolytic process taking place at the laser-heated substrate was important. Some of the physical properties of deposited films were described.
- 社団法人応用物理学会の論文
- 1984-07-20
著者
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Hanabusa Mitsugu
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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IWANAGA Takehiko
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Iwanaga T
Fuji Xerox Co. Ltd. Kanagawa Jpn
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