Polarized Extended X-Ray Absorption Fine Structure of High-T_c Superconducting Single-Crystal YBa_2Cu_3O_y : Electrical Properties of Condensed Matter
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-09-20
著者
-
Oshima Masaharu
Ntt Applied Electronics Laboratories
-
KATSUI Akinori
NTT Opto-Ekectronics laboratories
-
Maeyama Satoshi
Ntt Applied Electronics Laboratories
-
Katsui Akinori
Ntt Ibaraki Electrical Communication Laboratories Nippon Telegraph And Telephone Corporation
-
Satow Y
Photon Factory National Laboratory For High Energy Physics
-
SATOW Yoshinori
Photon Factory, National Laboratory for High Energy Physics
関連論文
- Thermoelectric Properties of CuM_XAl_O_2(M=Mg, Sr, Ca, Ba, Zn and Cd)
- Synchrotron Radiation Photoelectron Spectroscopy of High-T_c Superconductor Bi-Sr-Ca-Cu-O Single Crystals
- Structural Investigations of High-T_c Superconducting Untwinned DyBa_2Cu_3O_ Single Crystal by X-Ray Diffraction : Electrical Properties of Condensed Matter
- Surfaces and Interfaces of High-T_c Superconductors for Contact and Junction Formation Studied with Synchrotron Radiation Photoemisison Spectroscopy : High Temperature Superconducting Thin-Films(Solid State Devices and Materials 1)
- Structure and Bonding at the CaF_2/GaAs(111) Interface : Surfaces, Interfaces and Films
- Thermoelastic Strain in ZnSe Films Grown on GaAs by Metalorganic Vapor Phase Epitaxy : Condensed Matter
- Photoluminescence Due to Lattice-Mismatch Defects in High-Purity ZnSe Layers Grown by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices
- Photoemission Study on Initial Oxidation of Si Surfaces by Super-Pure Oxygen Gas
- Universal Passivation Effect of (NH_4)_2S_x Treatment on the Surface of III-V Compound Semiconductors
- X-Ray Study on Low-Temperature Behavior of an Incommensurate Superstructure in the New High-T_c Superconductor Bi_2Sr_2Ca_1Cu_2O_
- Cu_2-II-IV-S_4系多元化合物半導体の結晶作製と評価
- Thermal Analyses of CuInGeSe4 Quaternary Compound for Crystal Growth by Solution Method (Proceedings of the 12th International Conference on Ternary and Multinary Compounds ICTMC-12)
- Costal Growth of Cu-3-Ge-Se4 Quaternary Compounds(3=Ga,In) by Vertical Bridgman Methods (Proceedings of the 12th International Conference on Ternary and Multinary Compounds ICTMC-12)
- Cu_2-IV-VI_3, Cu_3-Sb-VI_4, Cu_2-Zn-IV-Se_4系化合物半導体の結晶作製と評価
- Cuベース多元化合物半導体の結晶成長と評価
- ゾルゲル合成CaMgSi_2O_6ゲルの結晶化過程に対する塩酸触媒濃度の影響
- ゾルゲル法によるCaTi_4(PO_4)_6多孔質結晶化ガラスの作製
- Surface Structure of InAs (001) Treated with (NH_4)_2S_x Solution
- Diffusion Barrier Mechanism of Extremely Thin Tungsten Silicon Nitride Film Formed by ECR Plasma Nitridation
- Effects of Hydrochloric Acid Catalyst Concentration on Crystallization of Sol-Gel Derived CaMaSi_2O_6Gels
- Polarized Extended X-Ray Absorption Fine Structure of High-T_c Superconducting Single-Crystal YBa_2Cu_3O_y : Electrical Properties of Condensed Matter
- Gettering Effects of B_2O_3 Encapsulant on Mg and Ca Impurities in LEC InP-Growth
- Determination of Stress and Stress Profiles in III-V Semiconductor Heteroepitaxial Films Using Beam Modulation Spectroscopy (SOLID STATE DEVICES AND MATERIALS 1)
- LEC Growth of High Purity InP Crystals by Pre-Encapsulation of Starting Material
- X-Ray Diffraction Curves from Mosaic Crystals at Near-Normal Incidence Angles
- Photoemission and RHEED Studies of Bonding Properties at the CaF_2/GaAs(001) Interface
- Crystallinity of GaN Film Grown by ECR Plasma-Excited MOVPE
- Crystal Growth of Superconducting Bi-Sr-Ca-Cu-O Compounds from KCl Solution : Electrical Properties of Condensed Matter