Crystallinity of GaN Film Grown by ECR Plasma-Excited MOVPE
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概要
- 論文の詳細を見る
In the ECR plasma-excited MOVPE of GaN film, a strong correlation was found between carbon incorporation into the film and the crystallinity change from single crystal to polycrystal. Mass spectroscopic analysis showed that undissociated TMGa in the ECR plasma played an important role in the crystallinity change mechanism.
- 社団法人応用物理学会の論文
- 1990-09-20
著者
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KATSUI Akinori
NTT Opto-Ekectronics laboratories
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MATSUOKA Takashi
NTT Opto-electronics Laboratories
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Sato Hirotsugu
Ntt Opto-electronics Laboratories
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Katsui Akinori
Ntt Opto-electronics Laboratories
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SASAKI Toru
NTT Opto-Electronics Laboratories
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