Preparation of High Quality Barium Fluoride Thin Film by Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• High quality BaF_2 (111) thin film was epitaxially grown on a CaF_2 (111) substrate by chemical vapor deposition. An novel fluorinated Barium β-diketone chelate; Ba(ofhd)_2 was used as the source material. Oxygen was introduced to complete the fluorination of the barium precursor. The full width at half maximum (Δθ_<50>) of the X-ray rocking curve of the film was 3-10 min. RBS spectra showed that the χ_<min> value of the BaF_2 film was 3.7% and that of BaF_2 single crystal was 2.8%. SIMS analysis confirmed that carbon and oxygen incorporation was at background levels.

• 社団法人応用物理学会の論文
• 1993-06-01

著者

• Sato Hirotsugu

  Ntt Opto-electronics Laboratories

• SUGAWARA Shungo

  NTT Opto-Electronics Laboratories

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• Preparation of Praseodymium-Doped Single Crystal Barium Fluoride Thin Film on CaF_2 by Chemical Vapor Deposition
• Preparation of High Quality Barium Fluoride Thin Film by Chemical Vapor Deposition

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