Determination of Stress and Stress Profiles in III-V Semiconductor Heteroepitaxial Films Using Beam Modulation Spectroscopy (SOLID STATE DEVICES AND MATERIALS 1)
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概要
- 論文の詳細を見る
Stress and stress profiles in GaAs and InP heteroepitaxial films grown on Si substrates have been studied by means of laser beam modulation spectroscopy. The experiments have been performed using the 5145 Å line of an Ar laser (20-500 μm in diameter) as a modulation beam source in measurements of modulated reflectance spectrum ΔR/R. The optical method presented is found to be useful for precise evaluation of stress and stress distribution profiles in heteroepitaxially grown semiconductor films.
- 社団法人応用物理学会の論文
- 1989-11-20
著者
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Hamaguchi Chihiro
Faculty of Engineering, Osaka University
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KATSUI Akinori
NTT Opto-Ekectronics laboratories
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Ando Koshi
Ntt Opto-electronics Laboratories
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Katsui Akinori
Ntt Opto-electronics Laboratories
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Hamaguchi Chihiro
Faculty Of Engineering Osaka University
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