Metalorganic Chemical Vapor Deposition of YBa_2Cu_3O_x Thin Films Using Bis-Dipivaloylmethanato-Barium Bis-Tetraethylenepentamine Adducts as a Novel Barium Source
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概要
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We have prepared YBa_2Cu_3O_x thin films by metalorganic chemical vapor deposition using bis-dipivaloyl-methanato-barium bis-tetraethylenepentamine adducts (Ba(DPM)_2-tetraen_2) as a new Ba precursor. This precursor has much higher volatility than typical Ba sources such as Ba(DPM)_2. A deposition rate of approximately 50 nm/h is achieved when the vaporizing temperature of Ba(DPM)_2-tetraen_2 is set at 140℃. This is seven times faster than that achieved using Ba(DPM)_2 at a vaporizing temperature of 187℃. A 200-nm-thick film grown on a MgO(100) substrate has a minimum channeling yield of 6%. The compositional deviation of the films is ±4% for up to 100 h of use.
- 社団法人応用物理学会の論文
- 1996-06-15
著者
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Zama Hideaki
Superconductivity Research Laboratory International Superconductivity Technology Center
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Morishita Tadataka
Superconductivity Research Laboratory International Superconductivity Technology Center
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