N-Channel Metal-Oxide-Semiconductor Device with the Step-Functional I-V Curves Caused by the Punch-Through between Drain and Inversion Layer of the Gate
スポンサーリンク
概要
- 論文の詳細を見る
The stair-shaped I-V characteristics are obtained by inserting a stair-shaped gap between the gate and drain in a metal-oxide-semiconductor field-effect transistor (MOSFET). The turn-on voltage depends on the amount of impurity ions along the path of punch-through. I-V characteristics of the polysilicon gate n-channel enhancement type MOS device are complementary to those of the Al-gate p-channel MOS device with a similar structure. The stable step-functional I-V characteristics are measured under a negative bias voltage applied to the substrate of boron-doped p-Si.
- 社団法人応用物理学会の論文
- 1995-10-01
著者
-
Yamanouchi Kazuhiko
Research Institute Of Electrical Communication Tohoku University
-
Karasawa Shinji
Miyagi National College Of Technology
-
OMORI Junichi
NEC IC Microcomputer System Ltd.
関連論文
- Factors Influencing the Variation of Surface Acoustic Wave Velocity in Lithium Tetraborate
- Consideration of Small Variation of Surface Acoustic Wave (SAW) Velocity in Lithium Tetraborate
- Observation of Ultrathin Single-Domain Layers Formed on LiTaO_3 and LiNbO_3 Surfaces Using Scanning Nonlinear Dielectric Microscope with Submicron Resolution
- Humidity Sensitivity of Lamb Waves on Composite Polyimide/ZnO/Si_3N_4 Structure
- Wide Bandwidth Low Loss Filters Using Piezoelectric Leaky SAW Unidirectional Transducers with Floating Electrodes : SAW and Communication Devices
- UHF-Range Positive/Negative Reflection Type SAW Resonators on LiNbO_3 Using New Fabrication Techinique : SAW and BAW Materials, Devices and Theories
- GHz-Range Conventional λ/4 Unidirectional Surface Acoustic Wave Transducers and Their Application to Low-Loss and Zero-Temperature Coefficient Filters
- Phase Modulation of the Light Wave Propagating in an Optical Fiber by Acoustic Waves
- Nanometer Electrode Fabrication Technology Using Anodic Oxidation Resist and Application to Unidirectional Surface Acoustic Wave Transducers
- Waveguide-Type Multifrequency Acoustooptic Modulators
- 10 GHz-Range Surface Acoustic Wave Low Loss Filter Measured at Low Temperature
- Surface Acoustic Wave Paramagnetic Resonance in Iron Doped-LiNbO_3 : Physical Acoustics
- A Surface Acoustic Wave Elastic Convolver using a KNbO_3 Single Crystal Substrate
- 10 GHz Range Low-Loss Ladder Type Surface Acoustic Wave Filter
- 5 GHz Range Low-Loss Wide Band Surface Acoustic Wave Filters Using Electrode Thickness Difference Type Unidirectional Transducers
- Excitation of Surface Acoustic Waves Using Electron Acoustic Microscope : Ultrasonic Imaging and Microscopy
- New Types of SAW Reflector and Resonator Consisting of Reflecting Elements with Alternative(Positive and Negative) Reflection Coefficients : SAW and Communication Devices
- GHz-Range Unidirectional Low-Loss SAW Filters and Fine Lithograrphy Technology
- Theoretical Analysis of Comb Transducers for Surface Acoustic Waves : Surface Acoustic Waves and Devices
- 10 GHz Surface Acoustic Wave Filters with Narrow-Gap Interdigital Transducer Structure
- Low-Loss Surface Acoustic Wave Filter on Natural-Single Phase Unidirectional Transducter Orientations of a Li_2B_4O_7 Substrate
- Superhigh Electromechanieal Coupling and Zero-Temperature Characteristics of KNbO_3 and Wide Band Filter Applications
- A Study on the Scalar Wave Equation for Nonlinear Surface Acoustic Wave Distortion
- Temperature Dependence of the Elastic Surface Wave Velocity on LiNbO_3 and LiTaO_3
- Group-type Unidirectional Acoustic Surface Wave Filters Using Distance Weighting Techniques : Communication Devices and Materials
- Surface Acoustic Wave Propagation Characteristics under the Coded Electrodes of Surface Acoustic Wave Matched Filters
- Ultrasonic Micromanipulator Using Visual Feedback
- Transduction Characteristics of a Surface Acoustic Wave Unidirectional Interdigital Transducer with Liquid Loading
- Ultrasonic Micromanipulation of Small Particles in Liquid
- Multi-Step Function MOS Transistor Circuits (Special Issue on Multiple-Valued Integrated Circuits)
- N-Channel Metal-Oxide-Semiconductor Device with the Step-Functional I-V Curves Caused by the Punch-Through between Drain and Inversion Layer of the Gate
- Metal-Oxide-Semiconductor Field-Effect-Transistors Possessing Step Functional I-V Curves Caused by the Punch Through between Drain and Inversion Layer of the Gate
- Attributes of Language Use Explained by Activities of Neurons
- UHF range surface acoustic wave filters using uni-directional interdigital transducers.