Metal-Oxide-Semiconductor Field-Effect-Transistors Possessing Step Functional I-V Curves Caused by the Punch Through between Drain and Inversion Layer of the Gate

概要

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Through measurements of an Al gate p-channel Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) with a gap between the gate and drain, the behavior of the minority carrier in the depletion layer is clarified. The turn-on drain voltage depends upon the length and the density of impurity on the punch-through area. That is, V_d=-4 V for L_<gap>=0.5 μm in 3∼5 Ω・cm n-Si wafer and V_d=-3 V for L_<gap>=2.0 μm in 120∼200 Ω・cm n-Si wafer. The abrupt step functional I-V curve is revealed under the condition of low gate voltage. There are surface effects by which the higher the gate voltage, the lower the turn-on voltage of the drain becomes. The hole mobility in the depletion layer made from lightly doped <111> wafer abruptly decreases when the temperature is lowered to below 20 K and the turn-on voltage on the step function MOSFET increases remarkably at 4.2 K.
社団法人応用物理学会の論文
1992-02-15