Vapour Growth of Nb_3Se_4 Crystals

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概要

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• Single crystals of Nb_3Se_4 were grown by vapour growth technique with chemical transport in the temperature region of about 1000℃, with iodine transporter. A batch of tiny needle-like or fibre crystals about 5mm in length was found to grow after three to four weeks. Some of the crystals grew to a size of 0.3×0.3×5mm^3 and had a pseudo-hexagonal crystal habit. Observation by optical microscope revealed fine step structures on the surfaces of the crystals, suggesting that the crystals had grown by the surface diffusion process characteristic of the vapour transport growth.

• 社団法人応用物理学会の論文
• 1985-01-20

著者

• Nakada Ichiroh

  The Institute For Solid State Physics The University Of Tokyo

• Ishihara Yutaka

  Faculty Of Science Kanazawa University

関連論文

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• Picosecond Laser Induced Rapid Crystallization in Amorphous Silicon
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• Superconductivity of Y_1Ba_2(Cu_Al_x)_3O_y and Y_1Ba_2(Cu_Zn_x)_3O_y
• Two Crystal Phases in the Superconducting Ba-Y-Cu-O System and Their Reactivity to Water
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• Meissner Effect and Resistivity of the Supereonducting Y-Ba-Cu-O System
• Preparation of a Quansi-One-Dimensional Nb_3S_4 Single Crystal
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• The Electrical Conductivity of Anthracene
• The Generation of Charge-Carriers in Crystalline Anthracene Doped with Tetracene
• The Effects of Temperature and Electric Field for the Photo-Generation of Free Carriers in Anthracene
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• The Activation Energy of Photoconduction in the Optical Absorption Edge of Crystalline Anthracene
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• The Trapping of Photo-Carriers in Anthracene Crystals by Tetracene
• Anomalous Temperature Dependence of Photoconductivity in SrTiO3

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