The Effects of Temperature and Electric Field for the Photo-Generation of Free Carriers in Anthracene
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概要
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In order to study the generation of free carriers in an anthracene crystal, the measurement of the pulsed photoconduction has been performed. The number of free holes and electrons produced in a crystal after a flash illumination has been found to depend both on the temperature and the electric fild. The number of generated holes increases exponentially with the rise of the temperature. At the higher temperatures it sbows a tendency of saturation. The temperature dependency is not so remarkable for electrons. The number of holes and electrons increases with the field strength; yet in the higher field region the tendency of the saturation appears. The mobility of holes at the room temperature is O.8 cm^2/V.s and decreases as the temperature is raised. The mobility of eiectrons at the room temperature is O.4 cm^2/V.s and its variation with temperature is small. A model of energy levels is proposed for the carrier generation.
- 社団法人日本物理学会の論文
- 1964-05-05
著者
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Nakada Ichiroh
The Institute For Solid State Physics The University Of Tokyo
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Ishihara Yutaka
Department Of Physics And Chemistry Gakushuin University
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