In Situ IR Spectroscopic Study of a-Si:H Films Growing under Photo-Chemical Vapor Deposition Condition : Surfaces, Interfaces and Films

スポンサーリンク

概要

• 論文の詳細を見る

• Polarization modulation infrared spectroscopy has been successfully applied for in situ observations of a-Si:H films growing under photo-chemical vapor deposition conditions. The think films exhibited absorption bands arising from SiH_3 or SiH_2 species, depending upon the substrate temperature. Whereas the mass thickness of the film deposited at 293 K increased in proportion to the deposition time, the IR absorption intensity of SiH_3 species decreased in rate when the film grew beyond 15 Å in thickness, showing that the concentration of the SiH_3 species becomes reduced with the deposition time. Although the band ascribable to the Si-O stretching vibration could not be observed during the deposition, it grew when the film was exposed to air. This fact suggests that the origin of the oxygen incorporated in the film is mainly atmospheric oxidizing agents.

• 社団法人応用物理学会の論文
• 1988-04-20

著者

• SEKIGUCHI Atsushi

  ANELVA Corporation

• Suetaka Wataru

  Department Of Materials Science Faculty Of Engineering Tohoku University

• Wadayama Toshimasa

  Department Of Materials Science Faculty Of Engineering Tohoku University

• Sekiguchi Atsushi

  ANELVA CORP., Yotsuya 5-8-1, Fuchu 183-8508, Japan

関連論文

• Gas-Temperature-Controlled (GTC) CVD of Aluminum and Aluminum-Silicon Alloy Film for VLSI Processing : Techniques, Instrumentations and Measurement
• Epitaxial Growth of Al on Si by Gas-Temperature-Controlled Chemical Vapor Deposition : Techniques, Instrumentations and Measurement
• Infrared Absorption Enhancement of Octadecanethiol on Colloidal Silver Particles
• Enhancement of the Photoluminescence from Porous Silicon by Anodic Polarization
• In-situ Photoluminescence, Raman, and IR Spectral Study of Porous Silicon during Exposure to Thermoelectrons/H atoms, /H_2O and/O_3
• Unusual Photoluminescence Decay of Porous Silicon Prepared by Rapid Thermal Oxidation and Quenching in Liquid Nitrogen
• Photolurninescence and Raman Spectral Study of Porous Si during F_2 Exposure
• Bottom Coverage of Cu Deposit for 200-nm-Class Circular Vias with High Aspect Ratios Investigated by Magnetron Sputtering Activated Using Superconducting Bulk Magnet
• In Situ IR Spectroscopic Observation of a-Si:H(F) Films Growing under Spontaneous Chemical Deposition Method
• Ba_2Y_1Cu_3O_ Oxidation by Thermodynamic Nonequilibrium High-Temperature (TNH) Plasma
• In-situ IR and RHEED Observations of fcc-Fe Epitaxial Growth on Cu(100) in an Atmosphere of Carbon Monoxide
• In Situ IR Spectroscopic Study of the Reaction of Dimethylaluminum Hydride with Photochemically Deposited Amorphous Silicon
• In Situ IR Spectroscopic Study of a-Si:H Films Growing under Photo-Chemical Vapor Deposition Condition : Surfaces, Interfaces and Films
• Bottom Coverage of Cu Deposit for 200-nm-Class Circular Vias with High Aspect Ratios Investigated by Magnetron Sputtering Activated Using Superconducting Bulk Magnet

もっと見る 閉じる

スポンサーリンク