In Situ IR Spectroscopic Observation of a-Si:H(F) Films Growing under Spontaneous Chemical Deposition Method

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概要

• 論文の詳細を見る

• Polarization modulation infrared spectroscopy has been applied to in situ observation of a-Si:H(F) films deposited by the spontaneous chemical deposition (SCD) method. The film showed multiple IR absorption bands due to the formation of various hydrogenated and fluorinated silicon species. These bands increased in intensity with deposition time, although the rates of intensity increase of the bands were different from each other. The absorption intensity change of these bands with the deposition time suggests that the predominant species in the initial stage of the deposition is fluorinated silicon. The exposure to air of the film deposited at a low substrate temperature resulted in the remarkable intensity decrease of the bands due to fluorinated silicon, accompanying the appearance of the Si-O stretching band.

• 社団法人応用物理学会の論文
• 1990-10-20

著者

• WADAYAMA Toshimasa

  Department of Materials Science, Graduate School of Engineering, Tohoku University

• HATTA Aritada

  Department of Materials Science, Graduate School of Engineering, Tohoku University

• Hatta A

  Department Of Materials Science Graduate School Of Engineering Tohoku University

• Hatta Aritada

  Department Of Materials Science Faculty Of Engineering Tohoku University

• Hanna Jun-ichi

  Imaging Science And Engineering Lab Tokyo Institute Of Technology

• Hanna Jun-ichi

  Imaging Science & Engineering Laboratory Tokyo Institute Of Technology

• Hanna Jun-ichi

  Imaging Science And Engineering Laboratory Tokyo Institute Of Technology

• Kayama Hideki

  Optical Disk Systems Development Center Matsushita Electric In4ustrial Co. Ltd.

• KAYAMA Hideki

  Department of Materials Science, Faculty of Engineering, Tohoku University

• SUETAKA Wataru

  Department of Materials Science, Faculty of Engineering, Tohoku University

• Suetaka Wataru

  Department Of Materials Science Faculty Of Engineering Tohoku University

• Wadayama Toshimasa

  Department Of Materials Science Faculty Of Engineering Tohoku University

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