In Situ IR Spectroscopic Study of the Reaction of Dimethylaluminum Hydride with Photochemically Deposited Amorphous Silicon
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概要
- 論文の詳細を見る
The reaction of dimethylaluminum hydride (DMAH) with photochemically deposited hydrogenated amorphous silicon (a-Si:H) has been studied in situ with polarization modulation IR spectroscopy. Below 473 K, the absorption bands due to SiH_3 species incorporated in the a-Si:H completely disappear upon exposure to DMAH under UV illumination while those due to SiH_2 species remain nearly unchanged. The intensity reduction of the SiH_2 absorption bands is observed above 473 K. These spectral changes are observed only in early stages of DMAH exposure. These results suggest that DMAH reacts with SiH_3 species present on the topmost surface of the a-Si:H film.
- 社団法人応用物理学会の論文
- 1995-06-15
著者
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WADAYAMA Toshimasa
Department of Materials Science, Graduate School of Engineering, Tohoku University
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Hatta Aritada
Department Of Materials Science Faculty Of Engineering Tohoku University
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SHIBATA Hironobu
Department of Internal Medicine, Tokushima Prefectural Central Hospital
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MAIWA Yoshihisa
Department of Materials Science, Faculty of Engineering, Tohoku University
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Shibata Hironobu
Department Of Internal Medicine Tokushima Prefectural Central Hospital
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Shibata Hironobu
Department Of Materials Science Faculty Of Engineering Tohoku University
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Wadayama Toshimasa
Department Of Materials Science Faculty Of Engineering Tohoku University
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Maiwa Yoshihisa
Department Of Materials Science Faculty Of Engineering Tohoku University
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