Unusual Photoluminescence Decay of Porous Silicon Prepared by Rapid Thermal Oxidation and Quenching in Liquid Nitrogen
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概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 2002-11-01
著者
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WADAYAMA Toshimasa
Department of Materials Science, Graduate School of Engineering, Tohoku University
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HATTA Aritada
Department of Materials Science, Graduate School of Engineering, Tohoku University
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和田山 智正
Department Of Materials Science Graduate School Of Engineering Tohoku University
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Hatta A
Tohoku Univ. Sendai Jpn
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Hatta Aritada
Department Of Materials Science Faculty Of Engineering Tohoku University
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ARIGANE Tsuyoshi
Department of Materials Science, Graduate School of Engineering, Tohoku University
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ARIGANE Tuyoshi
Department of Materials Science, Graduate School of Engineering, Tohoku University
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HAYAMIZU Kensho
Department of Materials Science, Graduate School of Engineering, Tohoku University
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Arigane Tsuyoshi
Department Of Materials Science Graduate School Of Engineering Tohoku University
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Wadayama Toshimasa
Department Of Materials Science Faculty Of Engineering Tohoku University
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Hayamizu Kensho
Department Of Materials Science Graduate School Of Engineering Tohoku University
関連論文
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- Enhancement of the Photoluminescence from Porous Silicon by Anodic Polarization
- In-situ Photoluminescence, Raman, and IR Spectral Study of Porous Silicon during Exposure to Thermoelectrons/H atoms, /H_2O and/O_3
- Unusual Photoluminescence Decay of Porous Silicon Prepared by Rapid Thermal Oxidation and Quenching in Liquid Nitrogen
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