High Crystallinity Poly-Si_xGe_<1-x> at 450℃ on Amorphous Substrates

概要

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The composition variation and strutural properties of poly-SiGe thin films prepared by Reactive Thermal chemical vapor deposition (CVD) with Si_2H_6 and GeF_4 were investigated. Deposition of the films at 450℃ was carried out with various gas flow ratios of Si_2H_6 to GeF_4 on amorphous substrates such as glass plates and oxidized silicon wafers. The structural profiles of films were characterized by X-ray diffraction (XRD) and Raman scattering spectroscopies, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). All films show high crystallinity and (220) prefered orientation. The mole fractions of Si in the Si_xGe_<1-x> films were estimated to be from 0.95 to 0.05 for x, using Vegard's law for the XRD peaks. Crystallinity in the Si-rich films was affected by growth rate and was greatly improved at lower growth rates. TEM observation revealed that high crystallinity was well established, even in poly-Si_<0.95>Ge_<0.05> film, owing to direct polycrystalline layer growth on the substrate surface.
社団法人応用物理学会の論文
1997-08-01