Transport and Deposition Processes of Sputtered Particles in RF-Microwave Hybrid Sputtering Discharges (<Special Issue> Plasma Processing)

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概要

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• Transport and deposition processes of sputtered particles from a (Ba, Sr)TiO_3 target have been investigated in rf-microwave hybrid discharges with Ar/O_2. Deposition experiments were made over the gas pressure range of 0.5-10 mTorr using trenched substrates. Moreover, numerical simulations were carried out to reveal the effects of gas-phase scattering and surface re-emission of particles on their trajectories and the resulting deposition profiles in trenches. In the experiments, the step coverages of narrower trenches with aspect ratios above unity were found to be improved with decreasing pressure; such deposition behavior was predicted by the simulations, and was ascribed to the higher directionality of depositing fluxes onto the substrate at lower pressures.

• 社団法人応用物理学会の論文
• 1994-07-30

著者

• YUUKI Akimasa

  Semiconductor Research Laboratory, Mitsubishi Electric Corporation

• ONO Kouichi

  Semiconductor Research Laboratory, Mitsubishi Electric Corporation

• TUDA Mutumi

  Semiconductor Research Laboratory, Mitsubishi Electric Corporation

• Tuda Mutumi

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

• Yuuki Akimasa

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

• Ono Kouichi

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

関連論文

• Thermal Desorption Spectroscopy of (Ba, Sr)TiO_3 Thin Films Prepared by Chemical Vapor Deposition
• Preparation of (Ba, Sr)TiO_3 Thin Films by Chemical Vapor Deposition Using Liquid Sources
• Step Coverage and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM)_2 ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• In situ Monitoring of Product Species in Plasma Etching by Fourier Transform Infrared Absorption Spectroscopy
• Anisotropic Etching of n^+-Polysilicon Using Beam Plasmas Generated by Gas Puff Plasma Sources
• Chemical Kinetics of Chlorine in Electron Cyclotron Resonance Plasma Etching of Si ( Plasma Processing)
• Multicusp Electron-Cyclotron-Resonance Plasma Source Working with Microwaves Radially Injected through an Annular Slit
• Simulation of Ion Trajectories near Submicron-Patterned Surface Including Effects of Local Charging and Ion Drift Velocity toward Wafer ( Plasma Processing)
• Surface Morphologies and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Two-Step Deposition of Liquid Source Chemical Vapor Deposition
• Transport and Deposition Processes of Sputtered Particles in RF-Microwave Hybrid Sputtering Discharges ( Plasma Processing)

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