High Resolution Time-of-Flight Electron Spectrometer
スポンサーリンク
概要
- 論文の詳細を見る
We have developed a high resolution time-of-flight (TOF) electron spectrometer. To attain the high resolution, a new high speed electron gate was developed for precise flight time measurement. The time resolution of this gate improves for slow electrons and it is a few hundred picoseconds for an electron beam of a few eV. To evaluate the performance of the TOF spectrometer, we have measured the energy distribution of electrons emitted from NEA GaAs irradiated by a 820 nm GaAlAs laser with a 60 ps pulse width. The spectrometer including the gate works as intended and the highest resolution achieved is 3 meV for the electron flight energy of 3 eV.
- 社団法人応用物理学会の論文
- 1990-12-20
著者
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USHIODA Sukekatsu
RIKEN Photodynamics Research Center
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Ushioda Sukekatsu
Riken Photodynamics Research Center:japan Advanced Institute Of Science And Technology
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Ushioda Sukekatsu
School Of Materials Science Japan Advanced Institute Of Science And Technology
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Ushioda Sukekatsu
Research Institute Of Electrical Communication Tohoku University:riken Photodynamics Research Center
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Ushioda Sukekatsu
Research Institute Of Electrical Communication Tohoku University
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Ushioda Sukekatsu
Research Institute Of Electrical Communication Tohoku University And Crest-japan Science And Technol
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Ushioda Sukekatsu
Research Institute Of Electrical Communication Tohokn University
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Murata Yoshitada
Institute For Solid State Physics The Univeristy Of Tokyo
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Murata Yoshitada
Institute For Solid State Physics The University Of Tokyo
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Uehara Yoichi
Research Institute Of Electrical Communication Tohokn University
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USHIROKU Tadamasa
Research Institute of Electrical Communication, Tohokn University
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Ushiroku Tadamasa
Research Institute Of Electrical Communication Tohokn University:(present Address)murata Manufacturi
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Murata Yoshitada
Institute For Solid State Physics
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