Comparison of Light-Emission Efficiencies from Si-Metal-Oxide-Semiconductor Junctions and from Si in Scanning Tunneling Microscopy
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概要
- 論文の詳細を見る
We have investigated the mechanism of scanning tunneling microscope(STM)visible light emission from n-type Si(100).The current fluctuation theory that explained the light emission characteristics of the Si-metal-oxide-semiconductor(Si-MOS)tunnel junction is applied to the STM light emission from n-type Si(100).This theory reproduces the observed STM light emission spectra, and predicts that the light emission efficiency from the STM geometry is 〜1.5×10^4 times greater than that from the Si-MOS junctions.This prediction is consistent with our experimental result.Experimentally, the light emission intensity from the Si surface under the STM is comparable to that from the Si-MOS junction, although the tunnelig current in the STM is 10^<-3> of the current in theSi-MOS junction.That is, the light emission efficiency from the STM is at least 10^3 times greater than that from the Si-MOS.
- 社団法人応用物理学会の論文
- 2000-08-15
著者
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USHIODA Sukekatsu
RIKEN Photodynamics Research Center
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Uehara Y
Advanced Technology R&d Center Mitsubishi Electric Corp. Department Of Chemistry Faculty Of Scie
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USHIODA Sukekatsu
Research Institute of Electrical Communication, Tohoku University
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Uehara Yoichi
Research Institute Of Electrical Communication Tohoku University
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Ushioda Sukekatsu
Riken Photodynamics Research Center:japan Advanced Institute Of Science And Technology
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Ushioda Sukekatsu
School Of Materials Science Japan Advanced Institute Of Science And Technology
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Ushioda Sukekatsu
Research Institute Of Electrical Communication Tohoku University:riken Photodynamics Research Center
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Ushioda Sukekatsu
Research Institute Of Electrical Communication Tohoku University
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Ushioda Sukekatsu
Research Institute Of Electrical Communication Tohoku University And Crest-japan Science And Technol
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Ushioda Sukekatsu
Research Institute Of Electrical Communication Tohokn University
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Kuwahara Masashi
Research Institute Of Electrical Communication Tohoku University And Crest-japan Science And Technol
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Uehara Yoichi
Research Institute Of Electrical Communication Tohoku University And Crest-japan Science And Technol
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Uehara Yoichi
Research Institute Of Electrical Communication Tohokn University
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