The 1/f^2 Noise Spectrum Derived from Electromigration-Induced Resistance Change
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概要
- 論文の詳細を見る
A model based on the electromigration-induced resistance change was used to analyze the noise characteristics of aluminum thin-film resistors, and the 1/f^2 noise power spectrum was derived theoretically from the rate equation of the resistance change. Experiments were performed on samples stressed with a current density of 1×10^6 A/cm^2 at 125℃ for 50 hours. The measured noise indeed showed 1/f^2 noise and the results were analyzed quantitatively with the derived model.
- 社団法人応用物理学会の論文
- 1990-07-20
著者
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Chen C
National Tsing Hua Univ. Hsinchu Twn
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Liou D
National Tsing Hua Univ. Hsinchu Twn
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Chen C.
Department Of Aeronautics And Astronautics National Cheng-kung University
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LIOU D.
Department of Electrical Engineering, National Tsing Hua University
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GONG J.
Department of Electrical Engineering, National Tsing Hua University
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Gong J.
Department Of Electrical Engineering National Tsing Hua University
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