Vapor Phase Equilibria of Arsenic-Trioxide over Gallium Arsenide
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概要
- 論文の詳細を見る
Vapor phase equilibria are investigated of the new system for thermal oxidation of GaAs under a controlled vapor pressure of arsenic trioxide. Based on the thermochemical formulas, the partial pressures of As_4O_6(g), O_2(g), As_2(g), and As_4(g) over crystalline GaAs(s) are calculated as a function of the oxidation temperature. It is found that the most predominant gaseous species in the system is As_4O_6(g), of which partial pressure is much higher than that of dissociated O_2(g). At the practical oxidation temperatures above 380℃, the partial pressure of arsenic is slightly lower than but of the same order of magnitude as the dissociation pressure of GaAs. These results, together with a crude estimate of the equilibrium vapor pressure of the binary oxide mixture Ga_2O_3-As_2O_3, are discussed in relation to oxidation reactions of GaAs in the arsenictrioxide vapor. It is concluded that the oxidation method proposed is consistently favorable for formation of high-quality native oxide films containing a significant fraction of As_2O_3.
- 社団法人応用物理学会の論文
- 1979-04-05
著者
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Kano Gota
Research Laboratory Matsushita Electric Industrial Co. Ltd.
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Teramoto Iwao
Research Laboratory Matsushita Electronics Corp.
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Takagi Hiromitsu
Research Laboratory Matsushita Electronics Corporation
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