CdSe-Ge Hetero-Jnnction
スポンサーリンク
概要
- 論文の詳細を見る
- 1965-07-15
著者
-
Kano Gota
Research Laboratory Matsushita Electric Industrial Co. Ltd.
-
Kano Gota
Research Laboratory Matsushita Electronic Corp.
-
Yasuoka Akihiko
Faculty Of Engineering Osaka University
-
Nakai Junkichi
Faculty Of Engineering Osaka University
-
OKUMURA Takao
Faculty of Engineering, Osaka University
-
Okumura Takao
Faculty Of Engineering Osaka University
関連論文
- An Effect of Pinholes on the CdSe-Au-Ge Metal-Base-Transistors : Concerning Lavine's Comments
- CdSe-Ge Hetero-Jnnction
- Characteristics of the Contact between Vacuum-deposited CdSe Films and Au Films
- Schottky Emitter Type Metal Base Transistor
- Avalanche Breakdown Voltages in Punch-Through Si Epitaxial Planar Schottky Barrier Diodes
- A New Heterojunction-Gate GaAs FET : A-4: FIELD EFFECT TRANSISTORS (I)
- Direct Observation of Au Film Deposited on Ge Crystal
- Space-Charge-Limited-Current in Vacuum-Deposited ZnTe Films
- On the Relations between Electron Emission, Conduction and Noise of Oxide-coated Cathodes
- Vapor Phase Equilibria of Arsenic-Trioxide over Gallium Arsenide
- On the Tunneling Current through Thin Aluminum-Oxide Films
- Surface Treatment of Core Metal used for Oxide-coated Cathode
- On the Effect of Electrolytic Treatment of Ni-Sleeve on Electron Emission
- Spectral Sensitivity of Photovoltaic Effect of Ge Film Obliquely Deposited in Vacuum
- On the Tunneling Current through Thin Aluminum-Oxide Films