A New Heterojunction-Gate GaAs FET : A-4: FIELD EFFECT TRANSISTORS (I)
スポンサーリンク
概要
著者
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Kano Gota
Research Laboratory Matsushita Electronics Corporation
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Kano Gota
Research Laboratory Matsushita Electric Industrial Co. Ltd.
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Inoue Morio
Research Laboratory Matsushita Electronics Corporation
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Inoue Morio
Research Laboratory Matsushita Electronics Corp.
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UMEBACHI Shotaro
Research Laboratory, Matsushita Electronics Corporation
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ASAHI Kunihiko
Research Laboratory, Matsushita Electronics Corporation
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NAGASHIMA Atsushi
Research Laboratory, Matsushita Electronics Corporation
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Nagashima Atsushi
Research Laboratory Matsushita Electronics Corporation
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Asahi Kunihiko
Research Laboratory Matsushita Electronics Corporation
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Umebachi Shotaro
Research Laboratory Matsushita Electronics Corporation
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Nagashima Atsushi
Research Institute for Science and Engineering, Waseda University, Tokyo 169-8555, Japan
関連論文
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- Avalanche Breakdown Voltages in Punch-Through Si Epitaxial Planar Schottky Barrier Diodes
- A New Heterojunction-Gate GaAs FET : A-4: FIELD EFFECT TRANSISTORS (I)
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- Crystal Growth and Orientation of Vacuum Deposited Films of CdTe
- Surface Decoration of Germanium and Silicon
- Distribution Coefficinets of Se and Zn in InAs Crystals
- Vapor Growth of GaAs_P_x by the Pyrolysis of Ga(CH_3)_3, AsH_3 and PH_3
- Position Sensitive Element for Hypervelocity Microparticles Using a Piezoelectric Plate
- Vapor Phase Equilibria of Arsenic-Trioxide over Gallium Arsenide
- Tripyramid Growth in Epitaxial Germanium Layers