Distribution Coefficinets of Se and Zn in InAs Crystals
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1965-07-15
著者
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Inoue Morio
Research Laboratory Matsushita Electronics Corporation
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Inoue Morio
Research Laboratory Matsushita Electronics Corp.
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YOKOZAWA Masami
Research Laboratory, Matsushita Electronics Corporation
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KOHARA Rikusei
Research Laboratory, Matsushita Electronics Corporation
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OKABAYASHI Yoichi
Research Laboratory, Matsushita Electronics Corporation
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Kohara Rikusei
Research Laboratory Matsushita Electronics Corporation
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Yokozawa Masami
Research Laboratory Matsushita Electronics Corp.
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Yokozawa Masami
Research Laboratory Matsushita Electronics Corporation
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Okabayashi Yoichi
Research Laboratory Matsushita Electronics Corporation
関連論文
- A New Heterojunction-Gate GaAs FET : A-4: FIELD EFFECT TRANSISTORS (I)
- Direct Observation of Au Film Deposited on Ge Crystal
- Etching of Germanium with Water Vapor
- Crystal Growth and Orientation of Vacuum Deposited Films of CdTe
- Surface Decoration of Germanium and Silicon
- Distribution Coefficinets of Se and Zn in InAs Crystals
- Vapor Growth of GaAs_P_x by the Pyrolysis of Ga(CH_3)_3, AsH_3 and PH_3
- Tripyramid Growth in Epitaxial Germanium Layers
- Vapor Deposition of TiO_2
- Diffusion of Se in CdTe
- Distribution Coefficient and Electrical Behavior of In in CdTe Crystals