Surface Decoration of Germanium and Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1964-01-15
著者
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Inoue Morio
Research Laboratory Matsushita Electronics Corporation
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Inoue Morio
Research Laboratory Matsushita Electronics Corp.
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INOUE M.
Research Institute of Environmental Medicine, Nagoya University
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Inoue M.
Research Laboratory, Matsushita, Electronics, Corporation
関連論文
- Developmental expression of protein kinase C isozymes in suncus and rat cerebellum : Abstracts of Papers Presented at the Thirty-Second Annual Meeting of the Japanese Teratology Society Tokyo, Japan, July 8-10, 1992
- A New Heterojunction-Gate GaAs FET : A-4: FIELD EFFECT TRANSISTORS (I)
- Direct Observation of Au Film Deposited on Ge Crystal
- Etching of Germanium with Water Vapor
- Crystal Growth and Orientation of Vacuum Deposited Films of CdTe
- Surface Decoration of Germanium and Silicon
- Distribution Coefficinets of Se and Zn in InAs Crystals
- Vapor Growth of GaAs_P_x by the Pyrolysis of Ga(CH_3)_3, AsH_3 and PH_3
- 30p-MA-2 Intermediate Energy Particle Accelerator Complex
- Tripyramid Growth in Epitaxial Germanium Layers
- Effects of illumination and color temperature of lighting on saliva secretion and taste threshold in Japanese and Chinese(Proceedings of the 7th International Congress of Physiological Anthropology)