Vapor Growth of GaAs_<1-x>P_x by the Pyrolysis of Ga(CH_3)_3, AsH_3 and PH_3
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1972-06-05
著者
-
Inoue Morio
Research Laboratory Matsushita Electronics Corporation
-
Inoue Morio
Research Laboratory Matsushita Electronics Corp.
-
ASAHI Kunihiko
Research Laboratory, Matsushita Electronics Corporation
-
Asahi Kunihiko
Research Laboratory Matsushita Electronics Corporation
関連論文
- A New Heterojunction-Gate GaAs FET : A-4: FIELD EFFECT TRANSISTORS (I)
- Direct Observation of Au Film Deposited on Ge Crystal
- Etching of Germanium with Water Vapor
- Crystal Growth and Orientation of Vacuum Deposited Films of CdTe
- Surface Decoration of Germanium and Silicon
- Distribution Coefficinets of Se and Zn in InAs Crystals
- Vapor Growth of GaAs_P_x by the Pyrolysis of Ga(CH_3)_3, AsH_3 and PH_3
- Tripyramid Growth in Epitaxial Germanium Layers