Avalanche Breakdown Voltages in Punch-Through Si Epitaxial Planar Schottky Barrier Diodes

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1969-04-05

著者

• Kano Gota

  Research Laboratory Matsushita Electronics Corporation

• Kano Gota

  Research Laboratory Matsushita Electric Industrial Co. Ltd.

関連論文

• An Effect of Pinholes on the CdSe-Au-Ge Metal-Base-Transistors : Concerning Lavine's Comments
• CdSe-Ge Hetero-Jnnction
• Avalanche Breakdown Voltages in Punch-Through Si Epitaxial Planar Schottky Barrier Diodes
• A New Heterojunction-Gate GaAs FET : A-4: FIELD EFFECT TRANSISTORS (I)
• Direct Observation of Au Film Deposited on Ge Crystal
• Vapor Phase Equilibria of Arsenic-Trioxide over Gallium Arsenide

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