Solid Solubility of Amphoteric Silicon in Gallium Arsenide

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概要

• 論文の詳細を見る

• The solid solubility isotherms for amphoteric silicon in GaAs are calculated as a function of silicon concentration along the gallium-arsenic-silicon liquidus isotherms. The regular solution approach is applied to a determination of the ternary liquidus surfaces. The temperature dependent equilibrium constants for the incorporation of silicon in GaAs are obtained by an extension of the previously reported method for evaluating the free energy changes involved in the transfer of silicon atoms from the arsenic to gallium sublattice. One of the interesting results is that the net carrier concentration in GaAs doped with amphoteric silicon alone can not exceed 10^<19> cm^<-3> under the single shallow acceptor model.

• 社団法人応用物理学会の論文
• 1974-11-05

著者

• Teramoto Iwao

  Research Laboratory Matsushita Electronics Corporation

• Teramoto Iwao

  Research Laboratory Matsushita Electronics Corp.

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