Thickness Dependence of Output Power and Response Time of Double-Heterostructure LED's
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概要
- 論文の詳細を見る
The output power and the response time of a surface-emitting DH-LED are obtained theoretically by solving diffusion equations for excess electrons in terms of the active layer geometry. A significant difference in the output power is found between an n-side up diode and a p-side up diode owing to absorption loss in the active layer. The optimum thickness for each type is predicted. It is also shown that the sinusoidal modulation bandwidth and the rise time strongly depend on the active layer thickness as well as the interface recombination velocity. The analytical results are in agreement with experiment.
- 社団法人応用物理学会の論文
- 1979-09-05
著者
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Teramoto Iwao
Research Laboratory Matsushita Electronics Corp.
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KAZUMURA Masaru
Research Laboratory, Matsushita Electronics Corporation
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YAMANAKA Haruyoshi
Research Laboratory, Matsushita Electronics Corporation
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Kazumura Masaru
Research Laboratory Matsushita Electronics Corporation
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Yamanaka Haruyoshi
Research Laboratory Matsushita Electronics Corporation
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