Formation and Quenching of Excimers in Low-Pressure Rare-Gas/Halogen Mixtures by E-Beam Excitation
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概要
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Low pressure Ar/F_2, Xe/Br_2, Xe/Cl_2, and Xe/HCl mixture gases are excited by an intense e-beam device with a short pulse duration. The temporal behaviour of the fluorescence intensity from rare-gas halide excimers is observed, and compared with the results of computer simulation. The excimers RX^* are dominantly produced by the direct reaction process R^*+X_2→RX^*+X (R:rare-gas atom, X:halogen atom) when the e-beam intensity or the rare-gas pressure is low, and the ionic recombination process R^++X^-+R→RX^*+R becomes dominant when the e-beam intensity or the rare-gas pressure is high. The predicted fluorescence profiles for the proposed reaction model are in good agreement with the observed curves, when the known rate-constants are applied. And some unknown constants are determined by the least-squares method.
- 社団法人応用物理学会の論文
- 1979-03-05
著者
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MAEDA Mitsuo
Department of Electrical Engineering,Kyushu University
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MIYAZOE Yasushi
Department of Electrical Engineering, Faculty of Engineering, Kyushu University
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Maeda Mitsuo
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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NISHITARUMIZU Tsuyoshi
Department of Electrical Engineering, Faculty of Engineering, Kyushu University
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Miyazoe Yasushi
Department Of Electrical Engineering Faculty Of Engineering Fukuoka University
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Nishitarumizu Tsuyoshi
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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