Non-Destructive Measurement of Surface Concentrations and Junction Depths of Diffused Semiconductor Layers
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概要
- 論文の詳細を見る
Infrared reflectivity of the diffused semiconductor with continuously varying impurity concentration is treated strictly, and computed numerically using an electronic computor. It is shown for thin diffused layers in silicon used for the ordinary planar technology that the wavelength of a reflectivity minimum, λ_<min>, depends not only on the surface concentration, but also the diffusion depth. It has been found that the surface concentrations and junction depths of the diffused semiconductor layer can be determined non-destructively using λ_<min> and sheet resistivity, provided the following seven conditions are satisfied. (l) Semiconductor materials (2) type of conductivity (3) bulk concentration (4) function-type of diffused impurity profile, F(x), are given, (5) pn junction is formed by diffusion, (6) F(x) has not unknown parameters except for the diffusion length of diffused impurity, √<Dt>, and (7) F(x) is a monotonic decreasing function. The figures usable for the above purpose are given for n-type complementary error function layer and n-type Gaussian layer in Si.
- 社団法人応用物理学会の論文
- 1968-04-05
著者
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ABE Toshio
Semiconductor Engineering Dept., Tokyo Shibaura Electric Co., Ltd.
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NISHI Yoshio
Semiconductor Engineering Department, Tokyo Shibaura Electric Co., Ltd.
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Nishi Yoshio
Semiconductor Engineering Dept. Tokyo Shibaura Electric Co. Ltd.
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Nishi Yoshio
Semiconductor Engineering Department Tokyo Shibaura Electric Co Ltd.
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Abe Toshio
Semiconductor Engineering Department Tokyo Shibaura Electric Co. Ltd.
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Nishi Yoshio
Semiconductor Development Department Tokyo Shibaura Electric Co. Ltd. (toshiba)
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