P-Channel versus N-Channel in MOS-ICs of Submicron Channel Lengths : A-2: MOS DEVICES/BASIC ASPECTS
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-04-30
著者
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Dang Luong
Ic Laboratory R & D Center Toshiba Corporation
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NISHI Yoshio
Semiconductor Engineering Department, Tokyo Shibaura Electric Co., Ltd.
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Nishi Yoshio
Semiconductor Engineering Laboratory Semiconductor Division Toshiba Corporation
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Nishi Yoshio
Semiconductor Engineering Department Tokyo Shibaura Electric Co Ltd.
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IWAI Hiroshi
Semiconductor Engineering Laboratory, Semiconductor Division, Toshiba Corporation
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TAGUCHI Shinji
Semiconductor Engineering Laboratory
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Iwai Hiroshi
Semiconductor Engineering Laboratory Semiconductor Division Toshiba Corporation
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Nishi Yoshio
Semiconductor Development Department Tokyo Shibaura Electric Co. Ltd. (toshiba)
関連論文
- On the Distribution of Impurities in Epitaxial Silicon Films
- Redistribution of Diffused Boron in Silicon by Thermal Oxidation
- Electron Spin Resonance in SiO_2 Grown on Silicon
- P-Channel versus N-Channel in MOS-ICs of Submicron Channel Lengths : A-2: MOS DEVICES/BASIC ASPECTS
- Non-Destructive Measurement of Surface Concentrations and Junction Depths of Diffused Semiconductor Layers
- Determination of Impurity Distribution in Silicon Epitaxial Film Using MOS Capacitor
- Free Carrier Absorption in p-Type Silicon
- Epitaxial Deposition of Silicon by Phrolysis of SiH_4
- Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I