Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I

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概要

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• Three kinds of paramagnetic centers named P_A, P_B and P_C have been found in a silicon-silicon dioxide structure at liquid nitrogen temperature. P_A (g=〜2.000, ΔH=〜4 Oe), and P_B having anisotropic g-value (g=〜-2.000〜2.010, ΔH=〜 Oe) are in the exide, while P_C which also has anisotropic g-value (g=〜2.06 〜2.07, ΔH=〜9 Oe) is in the silicon near the Si-SiO_2 interface. Distribution of P_B is successfully determined that it has the maximum concentration within about 400Å from the interface. P_A and P_B appear when the silicon is oxidized in dry oxidizing ambient or the Si-SiO_2 is cooled from elevated temperatures to room temperature with a cooling speed of about 500℃/sec. P_C appears when the Si-SiO_2 is heated at elevated temperatures followed by rapid cooling to room temperature or is exposed to the ambient containing an appreciable amount of hydrogen at elevated temperatures such as 1000℃, for 10 min. P_B is ascribed to a trivalent silicon 〓Si which has a nonbonding orbital electron in the Si-O network. The mechanisms for the various behaviors of the centers are also discussed in detail.

• 社団法人応用物理学会の論文
• 1971-01-05

著者

• Nishi Yoshio

  Semiconductor Development Department Tokyo Shibaura Electric Co. Ltd. (toshiba)

関連論文

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• Determination of Impurity Distribution in Silicon Epitaxial Film Using MOS Capacitor
• Free Carrier Absorption in p-Type Silicon
• Epitaxial Deposition of Silicon by Phrolysis of SiH_4
• Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I

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