Epitaxial Deposition of Silicon by Phrolysis of SiH_4

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1967-04-15

著者

• Nishi Yoshio

  Semiconductor Engineering Department Tokyo Shibaura Electric Co Ltd.

• Watanabe Masaharu

  Semiconductor Engineering Department Tokyo Shibaura Electric Co. Ltd.

• Nishi Yoshio

  Semiconductor Development Department Tokyo Shibaura Electric Co. Ltd. (toshiba)

• NISHI Yoshio

  Semiconductor Engineering Department, Tokyo Shibaura Electric Co. Ltd.

関連論文

• On the Distribution of Impurities in Epitaxial Silicon Films
• Redistribution of Diffused Boron in Silicon by Thermal Oxidation
• Electron Spin Resonance in SiO_2 Grown on Silicon
• P-Channel versus N-Channel in MOS-ICs of Submicron Channel Lengths : A-2: MOS DEVICES/BASIC ASPECTS
• Non-Destructive Measurement of Surface Concentrations and Junction Depths of Diffused Semiconductor Layers
• Determination of Impurity Distribution in Silicon Epitaxial Film Using MOS Capacitor
• Free Carrier Absorption in p-Type Silicon
• Epitaxial Deposition of Silicon by Phrolysis of SiH_4
• Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I

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