Redistribution of Diffused Boron in Silicon by Thermal Oxidation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1964-07-15
著者
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Kato Taketoshi
Semiconductor Engineering Dept. Tokyo Shibaura Electric Co. Ltd
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Kato Taketoshi
Semiconductor Engineering Department Tokyo Shibaura Electric Co. Ltd.
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NISHI Yoshio
Semiconductor Engineering Department, Tokyo Shibaura Electric Co., Ltd.
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Nishi Yoshio
Semiconductor Engineering Department Tokyo Shibaura Electric Co Ltd.
関連論文
- A Study of Gettering Effect of Metallic Impurities in Silicon
- Infrared Reflectivity of N on N^+ Si Wafers
- On the Distribution of Impurities in Epitaxial Silicon Films
- Redistribution of Diffused Boron in Silicon by Thermal Oxidation
- Electron Spin Resonance in SiO_2 Grown on Silicon
- P-Channel versus N-Channel in MOS-ICs of Submicron Channel Lengths : A-2: MOS DEVICES/BASIC ASPECTS
- Non-Destructive Measurement of Surface Concentrations and Junction Depths of Diffused Semiconductor Layers
- Determination of Impurity Distribution in Silicon Epitaxial Film Using MOS Capacitor
- Free Carrier Absorption in p-Type Silicon
- Epitaxial Deposition of Silicon by Phrolysis of SiH_4