A Study of Gettering Effect of Metallic Impurities in Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1968-05-05
著者
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Nakamura Masakatsu
Semiconductor Engineering Dept. Tokyo Shibaura Electric Co. Ltd
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Kato Taketoshi
Semiconductor Engineering Dept. Tokyo Shibaura Electric Co. Ltd
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Kato Taketoshi
Semiconductor Engineering Department Tokyo Shibaura Electric Co. Ltd.
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OI Noboru
Central Research Laboratory, Tokyo Shibaura Electric Co., Ltd.
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Oi Noboru
Central Research Laboratory Tokyo Shibaura Electric Co. Ltd.
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OI Noboru
Central Research Lab., Tokyo Shibaura Elec. Co., Ltd.
関連論文
- A Study of Gettering Effect of Metallic Impurities in Silicon
- Infrared Reflectivity of N on N^+ Si Wafers
- On the Distribution of Impurities in Epitaxial Silicon Films
- Redistribution of Diffused Boron in Silicon by Thermal Oxidation
- Determination of Epitaxial-Layer Impurity Distriburion by Neutron A ctivation Method
- Gamma-Ray Spectra of Fission Products Observed with Lithium Drifted Germanium Detectors
- Determination of 240Pu and 239Pu Ratio by Spontaneous Fission Counting
- Gamma-Ray Spectra of Fission Products observed with Li-Drifted Germanium Detectors, (II)
- Relocation of Fission Products and Pu in Irradiated UO2 Pellet
- Distribution of Fission Products in Irradiated UO2
- Production of Fission Product Xenon