Determination of Epitaxial-Layer Impurity Distriburion by Neutron A ctivation Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1965-01-15
著者
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OI Noboru
Central Research Laboratory, Tokyo Shibaura Electric Co., Ltd.
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ABE Toshio
Semiconductor Engineering Dept., Tokyo Shibaura Electric Co., Ltd.
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Oi Noboru
Central Research Laboratory Tokyo Shibaura Electric Co. Ltd.
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SATO Kanro
Semiconductor Engineering Dept. Tokyo Shibaura Electric Co., Ltd.
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Sato Kanro
Semiconductor Engineering Department Tokyo Shibaura Electric Co. Ltd.
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Sato Kanro
Semiconductor Engineering Dept. Tokyo Shibaura Electric Co. Ltd.
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Abe Toshio
Semiconductor Engineering Department Tokyo Shibaura Electric Co. Ltd.
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Abe Toshio
Semiconductor Engineering Dept. Tokyo Shibaura Electric Co. Ltd.
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OI Noboru
Central Research Lab., Tokyo Shibaura Elec. Co., Ltd.
関連論文
- A Study of Gettering Effect of Metallic Impurities in Silicon
- Infrared Reflectivity of N on N^+ Si Wafers
- On the Distribution of Impurities in Epitaxial Silicon Films
- Determination of Epitaxial-Layer Impurity Distriburion by Neutron A ctivation Method
- Effect of Heat Treatment on the Infrared Reflectivities of Heavily-Doped N-Type Silicon
- Non-Destructive Determination of Impurity Concentration in Silicon Epitaxial Layer Using Metal-Silicon Schottky Barrier
- Non-Destructive Measurement of Surface Concentrations and Junction Depths of Diffused Semiconductor Layers
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