Effect of Heat Treatment on the Infrared Reflectivities of Heavily-Doped N-Type Silicon

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1966-05-15

著者

• ABE Toshio

  Semiconductor Engineering Dept., Tokyo Shibaura Electric Co., Ltd.

• SATO Kanro

  Semiconductor Engineering Dept. Tokyo Shibaura Electric Co., Ltd.

• Sato Kanro

  Semiconductor Engineering Department Tokyo Shibaura Electric Co. Ltd.

• Abe Toshio

  Semiconductor Engineering Department Tokyo Shibaura Electric Co. Ltd.

関連論文

• Infrared Reflectivity of N on N^+ Si Wafers
• On the Distribution of Impurities in Epitaxial Silicon Films
• Determination of Epitaxial-Layer Impurity Distriburion by Neutron A ctivation Method
• Effect of Heat Treatment on the Infrared Reflectivities of Heavily-Doped N-Type Silicon
• Non-Destructive Determination of Impurity Concentration in Silicon Epitaxial Layer Using Metal-Silicon Schottky Barrier
• Non-Destructive Measurement of Surface Concentrations and Junction Depths of Diffused Semiconductor Layers

スポンサーリンク