Non-Destructive Determination of Impurity Concentration in Silicon Epitaxial Layer Using Metal-Silicon Schottky Barrier
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1968-07-05
著者
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ABE Toshio
Semiconductor Engineering Dept., Tokyo Shibaura Electric Co., Ltd.
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SATO Kanro
Semiconductor Engineering Dept. Tokyo Shibaura Electric Co., Ltd.
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Sato Kanro
Semiconductor Engineering Department Tokyo Shibaura Electric Co. Ltd.
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KONAKA Masami
Semiconductor Engineering Department, Tokyo Shibaura Electric Co., Ltd.
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Konaka Masami
Semiconductor Engineering Department Tokyo Shibaura Electric Co. Ltd.
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Konaka Masami
Semiconductor Engineering Department Tokyo Shibaura Electric Co Ltd.
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Abe Toshio
Semiconductor Engineering Department Tokyo Shibaura Electric Co. Ltd.
関連論文
- Infrared Reflectivity of N on N^+ Si Wafers
- On the Distribution of Impurities in Epitaxial Silicon Films
- Determination of Epitaxial-Layer Impurity Distriburion by Neutron A ctivation Method
- Effect of Heat Treatment on the Infrared Reflectivities of Heavily-Doped N-Type Silicon
- Non-Destructive Determination of Impurity Concentration in Silicon Epitaxial Layer Using Metal-Silicon Schottky Barrier
- Non-Destructive Measurement of Surface Concentrations and Junction Depths of Diffused Semiconductor Layers
- Determination of Impurity Distribution in Silicon Epitaxial Film Using MOS Capacitor