Photoluminescence Study of Defects in GaAs Formed by Annealing in an H_2 Gas Flow

概要

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GaAs crystals were annealed in an H_2 gas flow and the degraded layer formed on the surface by annealing has been investigated by a photoluminescence measurement. The origin of the defects, in particular an emission at 890 nm, formed by annealing has also been investigated with the aid of the liquid phase epitaxy technique. The degradation of the surface is governed by self-diffusion of As vacancies. The degraded layer depth increases in proportion to the square root of the heating time, whose rate depends on carrier concentrations in the crystals. As the crystals are annealed in an H_2 gas flow, new emission band at 890 nm grows drastically. It is concluded that the band is due to electron transitions from a shallow donor to an As vacancy acceptor.
社団法人応用物理学会の論文
1977-11-05