Undoped n-Type GaSb Grown by Liquid Phase Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1974-01-05
著者
-
Miki Hidejiro
Central Research Laboratory Mitsubishi Electric Corporation
-
Miki Hidejiro
Central Research Laboratories Mitsubishi Electric Corporation
-
Segawa Kazuaki
Central Research Laboratory Mitsubishi Electric Corporation
-
Segawa Kazuaki
Mitsubishi Electric Corp.
-
Fujibayashi Keiji
Faculty Of Science And Technology Kinki University
-
FUJIBAYASHI Keiji
Central Research Laboratory, Mitsubishi Electric Corporation
-
Fujibayashi Keiji
Central Research Laboratory Mitsubishi Electric Corporation
関連論文
- Silicon Contamination in Vapor-Grown Gallium Arsenide
- The Ga-In-Sb Ternary Phase Diagram at Low Growth Temperature
- Ga_xIn_Sb Crystals Grown by Liquid Phase Epitaxy
- Degradation of Gallium Arsenide Crystals by the Cold-Working Treatment (Abrasion)
- Undoped n-Type GaSb Grown by Liquid Phase Epitaxy
- The Influence of Oxygen on the Properties of GaAs Grown by Liquid Phase Epitaxy
- Chromium-Doped Semi-Insulating Gallium Arsenide Crystals Grown by Liquid Phase Epitaxy
- Photoluminescence Study of Defects in GaAs Formed by Annealing in an H_2 Gas Flow
- Liquid Phase Epitaxial Growth of GaAs Crystals under a Mixed Gas Atmosphere