Liquid Phase Epitaxial Growth of GaAs Crystals under a Mixed Gas Atmosphere

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Liquid phase epitaxial growth of GaAs crystals was performed under a mixed gas flow, a Pd-diffused H_2 gas and an arsenic vapor. It is found that liquid phase epitaxy under a mixed gas flow is effective in preparing high quality GaAs epitaxial layers with nearly stoichiometric composition. By using a mixed gas atomosphere, the un-doped epitaxial layers with carrier concentrations of the order of 10^<12>cm^<-3> and mobilties of 170,000cm^2/V sec at 77K were obtained reproducibly. The concentration of deep impurity in the epitaxial layers grown under a mixed gas atmosphere was approximately 5〜10 times less than that of the epitaxial layers grown under a H_2 gas flow. Photocapacitance measurement at room temperature shows the existence of a deep level at 1.36μm in the epitaxial layers. It seems that the deep level is related to As vacancies, and/or to As vacancies associated with Cu.
社団法人応用物理学会の論文
1975-05-05