Ga_xIn_<1-x>Sb Crystals Grown by Liquid Phase Epitaxy

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概要

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• Epitaxial layers of Ga_xIn_<1-x>Sb have been gown on GaSb and/or InSb substrates over the whole composition range. The influences of the growth conditions on the crystalline qualities of Ga_xIn_<1-x>Sb have been investigated by an optical microscope and the X-ray Kossel patterns. Single crystalline layers can be gown in the composition range, 0≤x≤0.93 on (111) InSb substrates and in the range, 0.70≤x≤1 on (100) GaSb substrates. The etch pit density in the grown layer was about 10^7 cm^<-2>, independent on the substrates and composition x. A considerable increase in the etch pit density in the substrate was observed after epitaxial growth. Ga was detected in the InSb substrate after epitaxial growth.

• 社団法人応用物理学会の論文
• 1978-01-05

著者

• Miki Hidejiro

  Central Research Laboratory Mitsubishi Electric Corporation

• Miki Hidejiro

  Central Research Laboratories Mitsubishi Electric Corporation

• Segawa Kazuaki

  Central Research Laboratory Mitsubishi Electric Corporation

• Segawa Kazuaki

  Mitsubishi Electric Corp.

• OTSUBO Mutsuyuki

  Central Research Laboratory, Mitsubishi Electric Corporation

• Fujibayashi Keiji

  Faculty Of Science And Technology Kinki University

• Otsubo Mutsuyuki

  Central Research Laboratory Mitsubishi Electric Corporation

• Otsubo Mutsuyuki

  Central Research Laboratories Mitsubishi Electric Corporation

• Fujibayashi Keiji

  Central Research Laboratory Mitsubishi Electric Corporation

関連論文

• Selective Epitaxial Growth of GaAs from the Liquid Phase
• Silicon Contamination in Vapor-Grown Gallium Arsenide
• The Ga-In-Sb Ternary Phase Diagram at Low Growth Temperature
• Ga_xIn_Sb Crystals Grown by Liquid Phase Epitaxy
• Degradation of Gallium Arsenide Crystals by the Cold-Working Treatment (Abrasion)
• Undoped n-Type GaSb Grown by Liquid Phase Epitaxy
• The Influence of Oxygen on the Properties of GaAs Grown by Liquid Phase Epitaxy
• Chromium-Doped Semi-Insulating Gallium Arsenide Crystals Grown by Liquid Phase Epitaxy
• Photoluminescence Study of Defects in GaAs Formed by Annealing in an H_2 Gas Flow
• Liquid Phase Epitaxial Growth of GaAs Crystals under a Mixed Gas Atmosphere

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