Selective Epitaxial Growth of GaAs from the Liquid Phase
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1977-12-05
著者
-
Ishihara Osamu
Central Research Laboratory Mitsubishi Electric Corporation
-
MITSUI Shigeru
Central Research Laboratory, Mitsubishi Electric Corporation
-
Mitsui Shigeru
Central Research Laboratory Mitsubishi Electric Corporation
-
Mitsui Shigeru
Central Research Laboratories Mitsubishi Electric Corporation
-
OTSUBO Mutsuyuki
Central Research Laboratory, Mitsubishi Electric Corporation
-
Otsubo Mutsuyuki
Central Research Laboratories Mitsubishi Electric Corporation
関連論文
- Ohmic Contacts to P-Type GaAs
- Control of the Surface Shape of GaAs Schottky Barrier Diodes by Mesa-Etching
- Influence of Thermocompression on GaAs Crystal for Gunn Diode
- Selective Epitaxial Growth of GaAs from the Liquid Phase
- Ga_xIn_Sb Crystals Grown by Liquid Phase Epitaxy
- Degradation of Gallium Arsenide Crystals by the Cold-Working Treatment (Abrasion)
- The Influence of Oxygen on the Properties of GaAs Grown by Liquid Phase Epitaxy
- Chromium-Doped Semi-Insulating Gallium Arsenide Crystals Grown by Liquid Phase Epitaxy
- Photoluminescence Study of Defects in GaAs Formed by Annealing in an H_2 Gas Flow
- Liquid Phase Epitaxial Growth of GaAs Crystals under a Mixed Gas Atmosphere