Control of the Surface Shape of GaAs Schottky Barrier Diodes by Mesa-Etching
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1974-08-05
著者
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Ishihara Osamu
Central Research Laboratory Mitsubishi Electric Corporation
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NISHITANI Kazuo
Central Research Laboratory, Mitsubishi Electric Corporation
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MITSUI Shigeru
Central Research Laboratory, Mitsubishi Electric Corporation
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Mitsui Shigeru
Central Research Laboratory Mitsubishi Electric Corporation
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Mitsui Shigeru
Central Research Laboratories Mitsubishi Electric Corporation
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Nishitani Kazuo
Central Research Laboratory Mitsubishi Electric Corporation
関連論文
- Ohmic Contacts to P-Type GaAs
- Control of the Surface Shape of GaAs Schottky Barrier Diodes by Mesa-Etching
- Influence of Thermocompression on GaAs Crystal for Gunn Diode
- Selective Epitaxial Growth of GaAs from the Liquid Phase
- Photoluminescence Study of Defects in GaAs Formed by Annealing in an H_2 Gas Flow