Degradation of Gallium Arsenide Crystals by the Cold-Working Treatment (Abrasion)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1975-06-05
著者
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Miki Hidejiro
Central Research Laboratory Mitsubishi Electric Corporation
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Miki Hidejiro
Central Research Laboratories Mitsubishi Electric Corporation
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OTSUBO Mutsuyuki
Central Research Laboratory, Mitsubishi Electric Corporation
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Fujibayashi Keiji
Faculty Of Science And Technology Kinki University
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SHIRAHATA Kiyoshi
Central Research Laboratory, Mitsubishi Electric Corporation
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FUJIBAYASHI Keiji
Central Research Laboratory, Mitsubishi Electric Corporation
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Shirahata Kiyoshi
Central Research Laboratory Mitsubishi Electric Corporation
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Shirahata Kiyoshi
Central Research Laboratory Mitsubishi Electric Corp.
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Otsubo Mutsuyuki
Central Research Laboratory Mitsubishi Electric Corporation
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Otsubo Mutsuyuki
Central Research Laboratories Mitsubishi Electric Corporation
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Fujibayashi Keiji
Central Research Laboratory Mitsubishi Electric Corporation
関連論文
- Selective Epitaxial Growth of GaAs from the Liquid Phase
- Silicon Contamination in Vapor-Grown Gallium Arsenide
- The Ga-In-Sb Ternary Phase Diagram at Low Growth Temperature
- Ga_xIn_Sb Crystals Grown by Liquid Phase Epitaxy
- Degradation of Gallium Arsenide Crystals by the Cold-Working Treatment (Abrasion)
- Undoped n-Type GaSb Grown by Liquid Phase Epitaxy
- The Influence of Oxygen on the Properties of GaAs Grown by Liquid Phase Epitaxy
- Chromium-Doped Semi-Insulating Gallium Arsenide Crystals Grown by Liquid Phase Epitaxy
- Photoluminescence Study of Defects in GaAs Formed by Annealing in an H_2 Gas Flow
- Current Multiplication Rate at the Peripheries of Buried Junctions
- Liquid Phase Epitaxial Growth of GaAs Crystals under a Mixed Gas Atmosphere