The Influence of Oxygen on the Properties of GaAs Grown by Liquid Phase Epitaxy

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概要

• 論文の詳細を見る

• Epitaxial layers of GaAs are grown from Ga solution. The effects of oxygen in achieving high purity GaAs layers are investigated. From the experimental results of doping with Ga_2O_3, the growth temperature dependence of carrier concentration and the impurity profile are explained by the temperature dependence of the distribution coefficient of oxygen in GaAs grown by liquid phase epitaxy. The distribution coefficients of oxygen are 6.5×10^<-4> at 700℃, 1.8×10^<-4> at 750℃ and 5.1×10^<-5> at 800℃, respectively.

• 社団法人応用物理学会の論文
• 1973-06-05

著者

• Miki Hidejiro

  Central Research Laboratory Mitsubishi Electric Corporation

• Miki Hidejiro

  Central Research Laboratories Mitsubishi Electric Corporation

• Segawa Kazuaki

  Central Research Laboratory Mitsubishi Electric Corporation

• Segawa Kazuaki

  Mitsubishi Electric Corp.

• OTSUBO Mutsuyuki

  Central Research Laboratory, Mitsubishi Electric Corporation

• Otsubo Mutsuyuki

  Central Research Laboratory Mitsubishi Electric Corporation

• Otsubo Mutsuyuki

  Central Research Laboratories Mitsubishi Electric Corporation

関連論文

• Selective Epitaxial Growth of GaAs from the Liquid Phase
• Silicon Contamination in Vapor-Grown Gallium Arsenide
• The Ga-In-Sb Ternary Phase Diagram at Low Growth Temperature
• Ga_xIn_Sb Crystals Grown by Liquid Phase Epitaxy
• Degradation of Gallium Arsenide Crystals by the Cold-Working Treatment (Abrasion)
• Undoped n-Type GaSb Grown by Liquid Phase Epitaxy
• The Influence of Oxygen on the Properties of GaAs Grown by Liquid Phase Epitaxy
• Chromium-Doped Semi-Insulating Gallium Arsenide Crystals Grown by Liquid Phase Epitaxy
• Photoluminescence Study of Defects in GaAs Formed by Annealing in an H_2 Gas Flow
• Liquid Phase Epitaxial Growth of GaAs Crystals under a Mixed Gas Atmosphere

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