Study on Work Function of the {0001} Faces of CdS Crystal. I.
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概要
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The work function (W_s) of the chemically etched {0001} face of a CdS crystal in vacuum and changes of W_s caused by the exposure of crystal faces to air are determined with the Kelvin method. The W_s of a crystal which is photoconductive and has a high surface specific resistivity of the order of 10^<10>〜10^<13> Ω/□ exhibits the relationships W_s(Cd face)>W_s(S face) in a vacuum of 10μ Torr and W_s(Cd face)≃W_s(S face) in air. In comparison, the W_s of a crystal which has a relatively low surface specific resistivity of the order of 10^3〜10^7Ω/□ exhbitis the relationship W_s(Cd face)<W_s(S face) in vacuum as well as in air, although the difference between the two is smaller than that in the case of high resistivity crystals. Moreover, abrupt exposure of the surface of a high resistivity CdS crystal to air in the dark immediately causes a large change in the contact potential difference between CdS and Au. The direction of this change depends without exception upon the difference in the polarity.
- 社団法人応用物理学会の論文
- 1974-06-05
著者
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Sasaki Kazuo
Department Of Applied Physics Tohoku University
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Sasaki Kazuo
Department Of Physics Faculty Of Science Hirosaki University
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Sasaki Kazuo
Department Of Applied Chemistry Faculty Of Engineering Hiroshima University
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