Gaseous Silicon Plasma Generated by a Low-Temperature Tokamak Discharge
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概要
- 論文の詳細を見る
Gaseous silicon plasma is generated in a hydrogen gas environment by use of a plasmaassisted Si arc in a tokamak discharge with a low electronic temperature (≦10eV) , a high electron density (〜 10^<12>cm^<-3>) , and a low hydrogen gas pressure (〜10^<-5> Torr) . On arcing, the spectral lines of Si II, Si III and Si IV ions as well as Si H radicals have been observed. Using the comparison spectroscopic method with no need of absolute measurement of line intensity, doubly ionized silicon ions are observed to be dominant, and the ionic density is estimated to be 10^<11>〜10^<12>cm^<-3>. The slllcon hydrogen plasma thus produced Is useful and has a potential for plasma processing, such as a-Si:H synthesis.
- 社団法人プラズマ・核融合学会の論文
- 1993-02-25
著者
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高村 秀一
Department of Energy Engineering and Science, Graduate School of Engineering, Nagoya University
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TAKAMURA Shuichi
Department of Electrical Engineering, Faculty of Engineering, Nagoya University
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Ohno Noriyasu
Department Of Energy Engineering And Science Nagoya University
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Ohno Noriyasu
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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HIRAMATSU KENJI
Department of Anesthesiology, Kinki University School of Medicine
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Hiramatsu K
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Hiramatsu Kenji
Department Of Anesthesiology Kinki University School Of Medicine
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Takamura Shuichi
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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大野 哲靖
Department of Electrical Engineering, Faculty of Engineering, Nagoya University
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平松 健司
Department of Electrical Engineering, Faculty of Engineering, Nagoya University
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